Display device, electronic apparatus, and display device manufacturing method

ABSTRACT

An embodiment provides a display device including an insulating layer which is continuous between opposed ends of two adjacent lower electrodes from an upper part of one of the ends to an upper part of the other end, a first organic layer which is disposed over the lower electrodes and the insulating layer, a second organic layer which is disposed over the lower electrodes and the insulating layer with the first organic layer interposed therebetween and includes a light emitting layer, and a second electrode which covers the organic layer. The upper face of the insulating layer includes a recess between the two lower electrodes. The aspect ratio of the recess is 0.5 or more.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 16/134,810, filed on Sep. 18, 2018, entitled “DISPLAY DEVICE,ELECTRONIC APPARATUS, AND DISPLAY DEVICE MANUFACTURING METHOD”, thecontent of which each application is expressly incorporated by referenceherein in its entirety, and which further claims priority from JapanesePatent Application No 2017-188934, filed Sep. 28, 2017, that of which isalso hereby incorporated by reference herein in its entirety.

BACKGROUND OF THE INVENTION Field of the Invention

The disclosure relates to a display device, an electronic apparatus, anda display device manufacturing method.

Description of the Related Art

For example, there is an organic light emitting display device as adisplay device. An organic light emitting element of the organic lightemitting display device generates light by recombination of electronsinjected from a cathode with holes injected from an anode in an organiclight emitting layer. The generated light is extracted from the cathodeside or the anode side.

In an active matrix display device using an organic light emittingelement, a pixel drive circuit which includes a drive transistor and amultilayer wiring structure is formed on a substrate, and organic lightemitting elements are arrayed on the substrate. As such a displaydevice, there is known a top emission display device which uses a lighttransmissive conductive material as a cathode. The top emission displayapparatus reflects light generated in an organic light emitting layer byan anode, and extracts the light from the cathode side.

As pixels of a display device using organic light emitting elements havebecome denser in recent years, a problem of leakage current through anorganic layer which is provided commonly between adjacent pixels whichare close to each other has come to light. Accordingly, a non-lightemitting pixel slightly emits light due to the influence from a lightemitting pixel, which causes color mixture or reduction in efficiency.

As a method for coping with the above problem, US 2012/0248475(hereinafter, PTL1) is disclosed. In PTL 1, a groove is formed on aninsulating layer which is disposed between organic light emittingelements to reduce the film thickness of a hole injection layer or ahole transport layer, which is an organic layer having a low resistance,inside the groove. As an embodiment disclosed in PTL 1, when insulatinglayers are laminated between the organic light emitting elements, agroove which penetrates the laminated insulating layers is formed.

In the method for controlling leakage current described in PTL 1 byusing the groove which penetrates a first insulating layer and a secondinsulating layer, an interface formed between the first insulating layerand the second insulating layer is in contact with the organic layer inthe groove. Thus, current may leak inside the organic layer through theinterface according to a potential gradient along the interface.

SUMMARY OF THE INVENTION

One aspect of the present embodiment relates to a display device. Anexample display device may include a first lower electrode and a secondlower electrode both disposed over a first insulating layer. A secondinsulating layer is disposed between the first lower electrode and thesecond lower electrode, on an end of the first lower electrode, and onan end of the second lower electrode. A first organic layer is disposedover the first lower electrode, the second insulating layer, and thesecond lower electrode. A second organic layer disposed over the firstorganic layer and including a light emitting layer. An upper electrodeis disposed over the second organic layer.

In a section passing through the first lower electrode, the second lowerelectrode, the first organic layer, the second organic layer, and theupper electrode, the second insulating layer includes a first partlocated on the end of the first lower electrode, a second part locatedon the end of the second lower electrode, and a third part continuousfrom the first part to the second part, an upper face of the third partof the second insulating layer includes a recess between the first lowerelectrode and the second lower electrode, and a length of the recess ina first direction in which the first lower electrode is laminated on thefirst insulating layer is 0.5 times or more a length of the recess in asecond direction perpendicular to the first direction.

Another aspect of the disclosure relates to another example displaydevice. The display device may include a first lower electrode and asecond lower electrode both disposed over a first insulating layer. Asecond insulating layer is disposed between the first lower electrodeand the second lower electrode, on an end of the first lower electrode,and on an end of the second lower electrode. A first organic layer isdisposed over the first lower electrode, the second insulating layer,and the second lower electrode. A second organic layer is disposed overthe first organic layer and including a light emitting layer; and anupper electrode disposed over the second organic layer.

In a section passing through the first lower electrode, the second lowerelectrode, the first organic layer, the second organic layer, and theupper electrode, the second insulating layer includes a first partlocated on the end of the first lower electrode, a second part locatedon the end of the second lower electrode, and a third part continuousfrom the first part to the second part, an upper face of the third partof the second insulating layer includes a recess between the first lowerelectrode and the second lower electrode, and a cavity is present insidethe recess between the third part of the second insulating layer and thefirst organic layer.

Still another aspect of the disclosure relates to an example displaydevice manufacturing method. The method includes forming a firstinsulating layer; forming a first lower electrode and a second lowerelectrode over the first insulating layer; removing part of the firstinsulating layer between the first lower electrode and the second lowerelectrode to form a recess on the first insulating layer; forming asecond insulating layer over the first lower electrode, the firstinsulating layer, and the second lower electrode, the second insulatinglayer being continuous from an upper part of an end of the first lowerelectrode to an upper part of an end of the second lower electrodethrough the recess of the first insulating layer and being in contactwith the recess of the first insulating layer; forming a first organiclayer over the first lower electrode, the second insulating layer, andthe second lower electrode; forming a second organic layer including alight emitting layer over the first lower electrode, the secondinsulating layer, and the second lower electrode with the first organiclayer interposed therebetween; and forming an upper electrode over thefirst lower electrode, the second insulating layer, and the second lowerelectrode with the first organic layer and the second organic layerinterposed therebetween.

Another aspect of the disclosure provides a display device that includesinsulating layers laminated between adjacent organic light emittingelements and has reduced leakage current through an interface betweenthe insulating layers.

Further features and aspects of the present disclosure will becomeapparent from the following description of example embodiments (withreference to the attached drawings).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of an example of a displaydevice according to a first embodiment.

FIG. 2 is a plan view of a pixel region of an example of the displaydevice according to the first embodiment.

FIG. 3 is a sectional view of an organic light emitting element of anexample of the display device according to the first embodiment.

FIG. 4 is a sectional view of a pixel portion of an example of thedisplay device according to the first embodiment.

FIGS. 5A to 5C are sectional views of the pixel portion of an example ofthe display device according to the first embodiment.

FIGS. 6A and 6B are plan views of the pixel region of an example of thedisplay device according to the first embodiment.

FIGS. 7A to 7C are manufacturing process flow diagrams of an example ofthe display device according to the first embodiment.

FIGS. 8A and 8B are manufacturing process flow diagrams of an example ofthe display device according to the first embodiment.

FIGS. 9A and 9B are manufacturing process flow diagrams of an example ofthe display device according to the first embodiment.

FIGS. 10A and 10B are manufacturing process flow diagrams of an exampleof the display device according to the first embodiment.

FIG. 11 is a schematic diagram of an evaporation process of an exampleof the display device according to the first embodiment.

FIG. 12 is a sectional view of an organic light emitting element of anexample of a display device according to a second embodiment.

FIG. 13 is a sectional view of a pixel portion of an example of thedisplay device according to the second embodiment.

FIG. 14 is a sectional view of an organic light emitting element of anexample of a display device according to a third embodiment.

FIGS. 15A and 15B are sectional views of a pixel portion of an exampleof the display device according to the third embodiment.

FIGS. 16A and 16B are plan views of a pixel region of an example of thedisplay device according to the third embodiment.

FIGS. 17A to 17C are manufacturing process flow diagrams of an exampleof the display device according to the third embodiment.

FIGS. 18A and 18B are manufacturing process flow diagrams of an exampleof the display device according to the third embodiment.

FIGS. 19A and 19B are manufacturing process flow diagrams of an exampleof the display device according to the third embodiment.

FIGS. 20A and 20B are sectional views of a pixel region of an example ofa display device according to a fourth embodiment.

FIG. 21 is a leakage characteristic graph of an example of the displaydevice according to the first embodiment.

FIG. 22 is a diagram describing an example of an electronic apparatusaccording to a fifth embodiment.

DESCRIPTION OF THE EMBODIMENTS

Hereinbelow, a display device according to an embodiment of thedisclosure will be described in detail with reference to the drawings.The following embodiments are examples of the disclosure. Values,shapes, materials, elements, and an arrangement and a connection form ofthe elements in the embodiments do not limit the disclosure. In thefollowing embodiments, the anode and the cathode described abovecorrespond to a first electrode and a second electrode, respectively.

First Example Embodiment

FIGS. 1 to 8B illustrate the configuration of a display device accordingto the present embodiment. FIG. 1 is an equivalent circuit diagram of anexample of the display device. A plurality of light emitting elements ELare arrayed in a pixel region 20 which is laid out on a substrate 100.Each of the light emitting elements EL corresponds to, for example, asub-pixel 2 of red, green, or blue. A peripheral circuit region isdisposed around the pixel region 20. The peripheral circuit region isprovided with, for example, a signal line drive circuit 40 and ascanning line drive circuit 50 which are drivers for video display.

A plurality of sub-pixels 2 are arranged in the pixel region 20. Each ofthe sub-pixels 2 includes, for example, a pixel drive circuit 30 and alight emitting element EL. The pixel drive circuit 30 is an active drivecircuit which is disposed in a layer lower than a first electrode(described below). The pixel drive circuit 30 includes, for example, awriting transistor Tr1, a drive transistor Tr2, and a holding capacitorCs.

The light emitting element EL is connected in series to the drivetransistor Tr2 between a first power line (Vcc) and a second power line(Vgnd). For example, an organic light emitting element can be used asthe light emitting element EL. One electrode of the holding capacitor Csis connected between the drive transistor Tr2 and the writing transistorTr1, and the other electrode thereof is connected to the first powerline (Vcc).

In the sub-pixel 2, a plurality of signal lines are arranged in a columndirection, and a plurality of scanning lines are arranged in a rowdirection. An intersection point of each of the signal lines with eachof the scanning lines corresponds to any one of the light emittingelements EL.

Each of the signal lines is connected to the signal line drive circuit40 which is disposed in the peripheral circuit region. An image signalis supplied to a source electrode of the writing transistor Tr1 from thesignal line drive circuit 40 through the signal line. Each of thescanning lines is connected to the scanning line drive circuit 50 whichis disposed in the peripheral circuit region. Scanning signals aresequentially supplied to a gate electrode of the writing transistor Tr1from the scanning line drive circuit 50 through the scanning line.

FIG. 2 is a planar structure diagram of part of the pixel regionaccording to the present embodiment. The plurality of light emittingelements EL are arrayed in a delta form on the substrate 100. Adjacentlight emitting elements EL correspond to pixels representing differentcolors. Here, sub-pixels 2 which emit red light, green light, and bluelight are referred to as a sub-pixel R, a sub-pixel G, and a sub-pixelB, respectively.

The pixel array form described herein is an example. The pixel arrayform may be a matrix form or another array form. The pixels of therespective colors described herein have the same area. However, thepixels of the respective colors may have different areas taking intoconsideration a resolution and a light emission efficiency of thedisplay device. In FIG. 2, the sub-pixel 2 has a hexagonal shape whichis suitable for high-density arrangement. The shape of the sub-pixel 2described herein is not limited to a hexagon, and may be appropriatelyselected from quadrangles such as a square and a rectangle, otherpolygons, and circles, or a combination thereof.

Three adjacent light emitting elements EL correspond to three sub-pixelswhich constitute one pixel. FIG. 2 illustrates an example in which thered sub-pixel R and the blue sub-pixel B are adjacent to each other in adirection X, and the red sub-pixel R and the green sub-pixel G areadjacent to each other in a direction S. The blue sub-pixel B and thegreen sub-pixel G are adjacent to each other in a direction T. A pitchof the sub-pixels 2 is, for example, approximately 5 μm. The directionX, the direction S, and the direction T are different from each other.In the present embodiment, an angle between the direction X, thedirection S, and the direction T is 60°.

The present embodiment describes an example in which three sub-pixels 2constitute one pixel. However, the number of sub-pixels 2 constitutingone pixel is not limited to three. For example, each pixel may includetwo green sub-pixels G so that one pixel includes four sub-pixels 2according to the resolution of the display device. Alternatively, forexample, each pixel may include a white sub-pixel W so that one pixelincludes four sub-pixels 2 according to the efficiency of the displaydevice. The pitch of the sub-pixels 2 or a pixel pitch is not limited tothe above pitch, and can be set to any pitch according to a pixeldensity required for the display device.

Each of the light emitting elements EL includes a plug 103 which isconnected to the pixel drive circuit 30. In FIG. 2, in two rows ofsub-pixels 2, plugs 103 in the first row are disposed on the upper sidein FIG. 2, and plugs 103 in the second row are disposed on the lowerside in FIG. 2. Although the light emitting elements EL of thesub-pixels 2 are arrayed in a delta form in FIG. 2, the pixel drivecircuits 30 are often arrayed in a matrix form. Thus, the positions ofthe plugs 103 are changed according to rows to shorten the length ofwiring for connecting the light emitting elements EL to the pixel drivecircuits 30. Accordingly, it is possible to reduce the area occupied bythe wiring. Further, it is possible to improve flexibility in alignmenttaking into consideration leakage with another wiring or a parasiticcapacitance.

FIG. 3 is a sectional structure diagram taken along line A-A′ whichextends across two adjacent sub-pixels illustrated in FIG. 2. Asdescribed above, there are the pixel region and the peripheral circuitregion on the substrate 100, and the pixel region includes the lightemitting elements EL, an optical system 210, and a drive circuit layer101 which includes the pixel drive circuit 30 corresponding to each ofthe light emitting elements EL. The drive circuit layer 101 includes thewriting transistor Tr1, the drive transistor Tr2, the holding capacitorCs, and a wiring layer. Further, the drive circuit layer 101 mayappropriately include a light shielding layer which reduces stray lightto each of the transistors.

A first insulating layer 102, which is planarized, is disposed over thedrive circuit layer 101. The light emitting elements EL described aboveare disposed over the first insulating layer 102. The light emittingelement EL is, for example, an organic light emitting element, and has astructure in which a first electrode 110 as a lower electrode (here, ananode), a second insulating layer 120, an organic layer 130, and asecond electrode 140 as an upper electrode (here, a cathode) arelaminated in this order.

The organic layer 130 includes an organic layer 131 which includes atleast either a hole injection layer or a hole transport layer and anorganic layer 132 which includes a light emitting layer. The organiclayer 131 is disposed over the first electrode 110 and the secondinsulating layer 120. The organic layer 132 is disposed over the firstelectrode 110 and the second insulating layer 120 with the organic layer131 interposed therebetween. The second electrode 140 is disposed overthe first electrode 110 and the second insulating layer 120 with theorganic layer 131 and the organic layer 132 interposed therebetween.

The upper face of the second insulating layer 120 includes a recess 200between adjacent first electrodes 110 (a range P surrounded by a brokenline in the drawing). Thus, the organic layer 131 which is disposed overthe second insulating layer 120 locally includes a thin-film part insidethe recess 200. Alternatively, the organic layer 131 may include adiscontinuous part (locally intermittent part) inside the recess 200.Accordingly, it is possible to increase the resistance of the organiclayer 131 between the light emitting elements. As a result, it ispossible to reduce or prevent leakage current which propagates from thefirst electrode 110 through the organic layer 131 and flows between theorganic light emitting elements or to an adjacent organic light emittingelement.

The film thickness and the area of the part having a locally reducedfilm thickness inside the recess 200 can be appropriately adjusted.Although an example of the organic layer 131 has been described above,the other organic layer 132 may also have nonuniform film thickness in asimilar manner.

The surface of the first insulating layer 102 between the firstelectrodes 110 is exposed to plasma in an etching process for the firstelectrodes 110, and may thus have a lower density than the density of adeep part. An interface between the low-density surface of the firstinsulating layer 102 and the second insulating layer 120 which isdisposed over the low-density surface is likely to have a defect (alow-density part), and has a low insulating property relative to theinside of the insulating layer. This is considered as one of the causesof leakage current on the interface between the first insulating layer102 and the second insulating layer 120.

Such leakage current causes slight light emission in a non-lightemitting pixel or between pixels due to the influence from a lightemitting pixel, which results in color mixture and reduction inefficiency.

Such a malfunction becomes worse when densification (higher resolution)of pixels of the display device is performed. For example, whendensification is performed in PTL 1, the distance between the firstelectrode and the groove is reduced. Accordingly, a resistance componenton an interface between a first insulating film 21 and a secondinsulating film 22 becomes small, and a malfunction caused by leakagecurrent through the interface becomes worse.

Thus, in the present embodiment, the interface between the firstinsulating layer 102 and the second insulating layer 120 is configurednot to be in contact with the organic layer 131.

FIG. 4 is an enlarge view of part of FIG. 3 in a section passing throughthe first electrode 110, the organic layer 130, and the second electrode140. In order to increase the resistance of the organic layer 131 insidethe recess 200 to reduce leakage current, an aspect ratio of the recess200 is preferably 0.5 or more. That is, a length D1 of the recess 200 ina direction Z in which the first electrode 110 is laminated on the firstinsulating layer 102 is preferably 0.5 times or more a length S1 of therecess 200 in a direction Y which is perpendicular to the laminationdirection Z. Further, the length D1 of the recess 200 in the direction Zin which the first electrode 110 is laminated on the first insulatinglayer 102 is more preferably equal to or more than the length S1 of therecess 200 in the direction Y perpendicular to the lamination directionZ.

In FIG. 4, the second insulating layer 120 is disposed between adjacentfirst electrodes 110. The second insulating layer 120 includes anopening over each of the first electrodes 110. Thus, in the section ofFIG. 3, the second insulating layer 120 includes a first part 120 awhich is disposed on an end of the first electrode 110 (left side), asecond part 120 b which is disposed on an end of the first electrode 110(right side), and a third part 120 c which is continuous from the firstpart 120 a to the second part 120 b. The first part 120 a and the secondpart 120 b overlap the first electrodes 110 in plan view. The third part120 c does not overlap the first electrodes 110 in plan view.

In this manner, the second insulating layer 120 is continuous betweenthe opposed ends of the adjacent first electrodes 110 from an upper partof one of the ends to an upper part of the other end. That is, thesecond insulating layer 120 covers the opposed ends of the adjacentfirst electrodes 110 and the upper face of the first insulating layer102 between the opposed ends. That is, even when the upper face of thesecond insulating layer 120 includes the recess 200, the organic layer131 which is disposed over the second insulating layer 120 is not incontact with the interface between the first insulating layer 102 andthe second insulating layer 120. Thus, the interface between the firstinsulating layer 102 and the second insulating layer 120 does not becomea leak path between the first electrodes 110 and the organic layer 131.

In FIG. 3, the organic light emitting element is protected by amoisture-proof layer 150 which is disposed over the second electrode140. A planarized layer 160 and a color filter layer 170 are disposedover the moisture-proof layer 150. Although the color filter layer 170described herein is laminated on the moisture-proof layer 150, thedisclosure is not limited thereto. Further, a black matrix (lightshielding unit) may be disposed between pixels in the color filter layer170.

As another form, the color filter layer 170 may be disposed on anothersubstrate which is opposed to the above substrate, and these substratesmay be bonded together. When the substrates are bonded together in thismanner, a moisture-proof material can be disposed on the othersubstrate. Thus, a moisture-proof layer may not be laminated on thesecond electrode as described above.

The display device is a so-called top emission display device which, forexample, extracts light generated in the organic layer 132 from the sideof the second electrode 140.

In a top emission display device, an anode having a high reflectivity isused to form a cavity structure. In the cavity structure, the filmthickness of each organic layer is defined by a light emissionwavelength and set to satisfy a multiple interference condition.Accordingly, it is possible to improve the efficiency of extractinglight to the outside and control an emission spectrum.

For example, aluminum, silver, or an alloy thereof can be used as aconductive material having a high reflectivity. Further, aluminum and analloy thereof can be preferably used for micromachining. Further, it ispossible to achieve a structure that enhances the cavity effect orimprove a carrier injection performance by forming a conductive materialhaving a high transmittance on a reflective metal.

In the display device illustrated in FIG. 3, the organic layer 132includes the light emitting layer which is common between the organiclight emitting elements. The organic layer 131 which includes the holeinjection layer or the hole transport layer is not patterned for eachpixel, but formed as a common layer. One organic layer 131 and oneorganic layer 132 are laminated in the present embodiment. However, aplurality of organic layers 131 and a plurality of organic layers 132may be laminated for the each of the organic layers of a plurality ofemission colors, and may be configured to emit, for example, whitelight. The white light is separated to red color, green color, and bluecolor by transmitting the color filter layer and emitted.

Hereinbelow, the structure of each part will be described in detail. Theplanarized first insulating layer 102 includes a fine connection holeinside thereof. Thus, the first insulating layer 102 is preferablyformed of a material having an excellent processing accuracy. The plug103 which is made of a conductive metal is embedded in the connectionhole. A transistor included in a pixel circuit which is disposed in thedrive circuit layer 101 is electrically connected to the first electrode110 through the plug 103. For example, an organic material such asacrylic or polyimide or an inorganic material such as silicon oxide(SiOx), silicon nitride (SiNx), or silicon oxynitride (SION) can be usedas the material of the first insulating layer 102.

The first electrode 110 is electrically separated for each pixel, andalso has a function as a reflective layer. The light emission efficiencyof the organic light emitting element can be increased by increasing thereflectivity of the first electrode 110.

The thickness of the first electrode 110 is, for example, 30 nm to 1000nm inclusive. The first electrode 110 has a structure in which a barriermetal layer 111, a reflective metal layer 112, and an injectionefficiency adjusting layer 113 for adjusting a hole injection efficiencyare laminated in this order from the first insulating layer 102 whichserves as a base.

The barrier metal layer 111 may be a single layer or a laminated layer.For example, a titanium film (Ti film) having a thickness of 10 nm to100 nm and a titanium nitride film having a thickness of 10 nm to 100 nmmay be laminated from the first insulating layer 102. The reflectivemetal layer 112 preferably has a reflectivity of 70% or more in avisible light region. For example, the reflective metal layer 112 may bepreferably formed of aluminum (Al), silver (Ag), or an alloy containingaluminum or silver. The film thickness of the reflective metal layer 112is desirably 50 nm or more to obtain a high reflectivity.

On the other hand, the upper limit of the film thickness of the firstelectrode 110 is preferably determined taking into considerationreducing roughness on the surface or disconnection or high resistancewhich may occur in a region where the organic layer 130 and the secondelectrode 140 which are formed on the first electrode 110 extend acrossa step part of the first electrode 110. Thus, for example, the filmthickness of the first electrode 110 is preferably smaller than the filmthickness of the organic layer 130 which is disposed between the firstelectrode 110 and the second electrode 140.

When aluminum or an aluminum alloy is used as the reflective metal layer112, the injection efficiency adjusting layer 113 is preferably formedon the reflective metal layer 112 taking into consideration reduction inthe hole injection efficiency caused by surface oxidation or a low workfunction. A refractory metal such as titanium (Ti), tungsten (W),molybdenum (Mo), chromium (Cr), or tantalum (Ta) or an alloy materialthereof, or a transparent electrode material such as ITO or IZO can beappropriately selected and used as the injection efficiency adjustinglayer 113.

When a refractory metal such as Ti is used as the injection efficiencyadjusting layer 113, the thickness of the injection efficiency adjustinglayer 113 is preferably 50 nm or less taking into considerationreduction in the reflectivity of the first electrode 110.

The organic layer 130 is disposed over the first electrode 110 and thesecond insulating layer 120 commonly to the plurality of organic lightemitting elements. The organic layer 130 has, for example, a structurein which the organic layer 131 which includes the hole injection layerand the hole transport layer and the organic layer 132 which includesthe light emitting layer and an electron transport layer are laminatedin this order from the first electrode. The organic layer 130 may notinclude either the hole injection layer or the hole transport layer ormay further include an electron injection layer. Known organic materialscan be used in an appropriately combined manner as the organic layer130.

A material having a low resistance value is preferably selected as thehole injection layer in view of hole injection properties. Thus, theconductivity of the organic layer 131 is higher than the conductivity ofthe organic layer 132. Since the conductivity of the organic layer 131is relatively high, light may be emitted between pixels or in anadjacent non-light emitting pixel due to leakage current through theorganic layer 131. Thus, the leakage current can be reduced by reducingthe film thickness of the organic layer 131 between pixels or making theorganic layer 131 discontinuous between pixels.

The second electrode 140 is disposed over the first electrode 110 andthe second insulating layer 120 with the organic layer 130 interposedtherebetween. The second electrode 140 is common to the plurality oforganic light emitting elements. The second electrode 140 is aconductive film having a light transmissive property, and may include asingle layer of ITO, IZO, ZnO, Ag, or an MgAg alloy, or a laminated filmcontaining two or more kinds of these materials. A material layerconstituting the second electrode 140 may be a plurality of layers madeof, for example, lithium fluoride and calcium taking electron injectionproperties into consideration. The second electrode 140 is electricallyconnected to the wiring layer included in the drive circuit layer 101around the pixel region (not illustrated).

When the film thickness of the second electrode 140 is reduced toincrease the transmittance of the second electrode 140, the secondelectrode 140 may also be electrically connected to the wiring layerincluded in the drive circuit layer 101 within the pixel region takinginto consideration a relatively high sheet resistance of the secondelectrode 140.

The moisture-proof layer 150 is disposed over the second electrode 140commonly to the plurality of organic light emitting elements. Themoisture-proof layer 150 is, for example, a silicon nitride (SiNx) filmhaving a thickness of 0.1 μm to 10 μm.

The color filter layer 170 is disposed over the moisture-proof layer150. The color filter layer 170 extracts light generated in each of theorganic light emitting elements as red light, green light, and bluelight for each sub-pixel. A light shielding unit for reducing colormixture between pixels may be disposed between color filter patternswhich are arranged for the respective emission colors.

As illustrated in FIG. 4, the second insulating layer 120 covers theupper face and the side face of an end of each first electrode 110. Thesecond insulating layer 120 is deposited across the first electrode 110and the first insulating layer 102 so that the second insulating layer120 covers an interface between the first electrode 110 and the firstinsulating layer 102. In the present embodiment, between adjacent firstelectrodes 110, the bottom of the recess 200 which is formed on theupper face of the second insulating layer 120 has a part shallower thanthe bottoms of the first electrodes 110.

As described above, in order to increase the resistance of the organiclayer 131 to reduce leakage current, the aspect ratio of the recess 200is preferably 0.5 or more, and more preferably 1.0 or more. The aspectratio of the recess 200 indicates the ratio of the length D1 of therecess 200 in the direction Z in which the first electrode 110 islaminated on the first insulating layer 102 to the length S1 of therecess 200 in the direction Y perpendicular to the lamination directionZ (D1/S1). For example, a groove may be formed on the first insulatinglayer 102 which serves as the base of the second insulating layer 120between adjacent first electrodes 110 to make the height of the surfaceof the first insulating layer 102 lower than the bottoms of the firstelectrodes 110. That is, the first insulating layer 102 may include arecess. For example, the depth (D2 in the drawing) of the groove of thefirst insulating layer 102 may be in the range of 1 nm to 100 nm.Accordingly, the aspect ratio of the recess 200 (described below) can beeasily increased. Further, the first insulating layer 102 may include aplurality of recesses.

In FIG. 4, the width of a space between the first electrodes 110 thatare disposed adjacent to each other is denoted by S0, and the width of aspace between parts of the second insulating layer 120, the partscovering the side faces of the first electrodes 110, is denoted by S1.

In the present embodiment, the aspect ratio of the recess 200 on theupper face of the second insulating layer 120 between the firstelectrodes 110 is 0.5 or more.

Thus, for example, the width (S1) of the space between the parts of thesecond insulating layer 120, the parts covering the side faces of thefirst electrodes 110 that are disposed adjacent to each other, is madesufficiently narrow relative to the width (S0) of the space between theadjacent first electrodes 110. That is, it is desired that therelationship (aspect ratio) between the depth (D1) of the recess 200 onthe upper face of the second insulating layer 120 and the width (S1) ofthe space thereof satisfy the relationship of the following <Formula 1>.Here, the width S1 of the space between the above parts of the secondinsulating layer 120 indicates the distance between parts of the secondinsulating layer 120 where the upper face of the second insulating layer120 starts inclining so as to form the recess 200.

D1/S1≥0.5  <Formula 1>

More preferably, it is desired to satisfy the relationship of D1/S1≥1.

For example, in the high-definition display device as described in thepresent embodiment, when the width S0 is 100 nm to 500 nm, the width S1is set in the range of 10 nm to 500 nm. When the width S1 and a width S3satisfy S1>S3, the width S1 may be larger than the width S0.

The width S1 of the space in the second insulating layer 120 ispreferably larger than the film thickness of the organic layer 131 (theorganic layer having a lower resistance than the organic layer 132)which is provided as a common layer. The space in the second insulatinglayer 120 is formed so as to at least leave a clearance indicated by thewidth S3 in the drawing in the organic layer 131 (e.g., the holeinjection layer) having a low resistance.

Setting the lower limit of the width S1 of the space in the secondinsulating layer 120 in this manner makes it easy to locally increasethe resistance of the organic layer 131 having a low resistance betweenthe adjacent first electrodes 110 using the inside of the recess 200 onthe upper face of the second insulating layer 120. In order to locallyincrease the resistance of the organic layer 131 with high efficiency,the width between the inner walls of the recess 200 is preferablysmaller than the width S1.

The width S1 of the space in the second insulating layer 120 ispreferably smaller than the total thickness of the organic layer 130which is sandwiched between the first electrode 110 and the secondelectrode 140. Setting the upper limit of the width S1 of the space inthe second insulating layer 120 makes it possible to make the depth (D3in the drawing) of a recess of the organic layer laminated on the recess200 on the upper face of the second insulating layer 120 shallower thanthe depth D1 of the recess 200 of the second insulating layer 120.

Thus, it is possible to prevent the second electrode 140 from locallyhaving a high resistance and having disconnection above the recess 200having a high aspect ratio on the upper face of the second insulatinglayer 120. For example, setting the aspect ratio of the recess 200 to 1or more makes it possible to prevent the second electrode 140 fromlocally having a high resistance and having disconnection above therecess 200 of the second insulating layer 120. Accordingly, it ispossible to prevent deterioration of the display performance such asshading (unevenness in luminance caused by a voltage drop within thesurface of the second electrode 140).

In the form as illustrated in FIG. 3 in which the moisture-proof layer150 is laminated over the second electrode 140, roughness of the surfaceof the second electrode 140 which serves as the base of themoisture-proof layer 150 is reduced as described above. Accordingly, itis possible to reduce the size or the probability of occurrence of adefect of the moisture-proof layer 150 caused by the roughness. Thedefect of the moisture-proof layer 150 described herein is, for example,a low-density part included near the step or an interface (hollow)formed between moisture-proof layers.

A structure that includes the moisture-proof layer 150 having a smallerfilm thickness than a conventional one can be selected by reducing thedefect of the moisture-proof layer 150 in this manner Thus, it ispossible to reduce the distance from a light emission position to thecolor filter layer 170. Thus, for example, it is possible to reducecolor mixture in the display device and improve a viewing anglecharacteristic (reduce a relative chromaticity change with respect to awider viewing angle).

Further, it is also possible to improve the accuracy of patterning thecolor filter layer 170 which is disposed over the moisture-proof layer150 by reducing the roughness of the surface of the moisture-proof layer150 in this manner Thus, higher-definition display can be achieved.

FIGS. 5A to 5C illustrate examples of a sectional structure diagram ofthe second insulating layer 120 which covers the first electrodes 110.For example, as illustrated in FIG. 5A, when the film thickness of thesecond insulating layer 120 on the end of the first electrode 110 isdenoted by t1, and the film thickness of the second insulating layer 120on the side face of the first electrode 110 is denoted by t2, these filmthicknesses may be equal to each other (t1=t2).

Alternatively, as illustrated in FIG. 5B, the film thickness t2 of thesecond insulating layer 120 on the side face of the first electrode 110may be larger than the film thickness t1 of the second insulating layer120 on the end of the first electrode 110 (t1<t2). Accordingly, forexample, even when there is a limitation on the upper limit of the filmthickness t1 on the end, a predetermined recess can be formed. Further,a recess having a narrower frontage than that in FIG. 5A can be formed.

Further, as illustrated in FIG. 5C, the film thickness t2 of the secondinsulating layer 120 on the side face of the first electrode 110 may besmaller than the film thickness t1 of the second insulating layer 120 onthe end of the first electrode 110 (t1>t2). Accordingly, for example, itbecomes easy to leave a clearance in the organic layer 131 on theopposed side faces of the recess 200 of the second insulating layer 120.

In all of FIGS. 5A to 5C, the recess 200 on the upper face of the secondinsulating layer 120 between the adjacent first electrodes 110 has ahigh aspect ratio, and the width (frontage) of the upper part of therecess 200 can be reduced.

FIGS. 6A and 6B illustrate examples of a planar structure diagram of therecess 200 on the upper face of the second insulating layer 120 betweenadjacent first electrodes 110 in the display device according to thepresent embodiment.

In the present embodiment, the width and the depth of the recess 200depends on the shape of the base of the second insulating layer 120.

For example, as illustrated in FIG. 6A, recesses 200 having a commonwidth (S1, S2) may be formed between all of the first electrodes 110(S1=S2 in FIG. 6A). Alternatively, as illustrated in FIG. 6B, recesses200 having different widths may be arranged in a combined manner withinthe display region (S1<S2 in FIG. 6B). In this case, for example, thefirst electrodes 110 may have different widths corresponding to thewidths of the respective recesses 200 of the second insulating layer120. The recesses 200 may have different aspect ratios corresponding tothe widths of the recesses 200, and the relationship of Formula (1) maybe satisfied in at least some of the recesses 200. When all of therecesses 200 are configured to satisfy the relationship in aspect ratioof Formula (1), it is possible to more preferably reduce leakage currentcaused by the organic layer 131.

Further, recesses 200 having different depths may be arranged in acombined manner. In this case, for example, the distance from the upperface of the first electrode 110 to the upper face of the firstinsulating layer 102 may be varied corresponding to the depth of therecess between the first electrodes 110. Specifically, as the distancefrom the upper face of the first electrode 110 to the upper face of thefirst insulating layer 102 increases, the depth of the recess 200 whichcovers the upper face and the side face of the end of the firstelectrode 110 increases.

The aspect ratio of the recess 200 may vary according to the depth ofthe recess 200. However, the relationship of Formula (1) may besatisfied in at least some of the recesses 200.

The widths and the depths of the recesses 200 as described above may becombined in any manner. For example, as described above, the recesses200 having nonuniform widths and depths may be appropriately selectedand disposed taking into consideration the shape and the array of pixelsin the display region and the resistance distribution of the secondelectrode 140. Further, in order to prevent deterioration of the displaycharacteristic (reduction in a color reproduction range caused by colormixture) caused by leakage current between pixels having differentemission colors, the recess 200 having a relatively high aspect ratiomay be formed between pixels having different emission colors.

The thickness of the second insulating layer 120 may be, for example, 1nm to 500 nm. For example, an organic material such as acrylic orpolyimide or an inorganic material such as silicon oxide (SiOx), siliconnitride (SiNx), or silicon oxynitride (SION) can be used as the materialof the second insulating layer 120. Since the organic layer deterioratesby the influence of moisture, the material of the second insulatinglayer 120 is preferably selected from materials having a low moisturecontent. The second insulating layer 120 having such a structure iscapable of ensuring an insulating property between the first electrode110 and the second electrode 140 by preventing exposure of the end ofthe first electrode 110.

The second insulating layer 120 defines a light emission region on thefirst electrode 110. The second insulating layer 120 extends between thefirst electrodes 110 that are arrayed adjacent to each other, covers theends (peripheral edges) of the first electrodes 110, and has an openingin a part corresponding to the light emission region on each of thefirst electrodes 110.

In order to prevent the malfunction of a local high resistance of thesecond electrode 140, part of the roughness on the surface of the secondinsulating layer 120 may have an easy slope. For example, the side faceof an opening 126 of the second insulating layer 120 over the firstelectrode 110 may have an easy slope or a step-like shape.Alternatively, the side face may have a plurality of angles.

The angle of the inclination or the step height or the width of themultistep structure of the side face of the opening 126 may be set inany manner within a range that constitutes no obstacle to the displayperformance taking into consideration, for example, the step coverageproperty and the resistance distribution of the second electrode 140.

FIG. 21 is a graph of a leakage current ratio (current flowing in aninter-pixel direction/current flowing in an organic layer film thicknessdirection) which depends on the aspect ratio of the recess 200 of thesecond insulating layer 120. The vertical axis represents the leakagecurrent ratio (current flowing in the inter-pixel direction/currentflowing in the organic layer film thickness direction), and thehorizontal axis represents the aspect ratio of the recess 200. When theaspect ratio of the recess 200 is 0.5 or more, a decreasing rate of theleakage current ratio increases. When the aspect ratio is 1.0 or more,the leakage current ratio becomes half or less, which shows that theleakage current can be more effectively reduced.

The result shown in the graph is an example. The leakage current ratiochanges depending on the distance between the first electrodes 110, thefilm thickness of the organic layer 131, the resistivity of the organiclayer 131, the material of the organic layer 131, and a combinationthereof. Also in this case, the leakage current between pixels can besufficiently reduced by setting the aspect ratio to 0.5 or more, andmore preferably, to 1.0 or more.

Next, an example of a method for manufacturing the display device of thepresent embodiment will be described with reference to FIGS. 7A to 7C,8A and 8B, 9A and 9B, and 10A and 10B.

First, as illustrated in FIG. 7A, the transistor and the capacitor ofthe drive circuit which includes the pixel drive circuit are formed onthe substrate described above by a known MOS process.

Next, an insulating film such as an oxide silicon film (SiOx) or anoxynitride silicon film (SiON) is formed to form the first insulatinglayer 102 by a plasma CVD method, a high-density plasma method, or acombination of these methods. After the first insulating layer 102 isformed, the surface of the first insulating layer 102 including thepixel region may be planarized by a CMP method.

Next, in the first insulating layer 102, a plurality of openings areformed at predetermined positions by a photolithography method and a dryetching method. For example, tungsten (W) is disposed in each of theopenings, and an excessive part is removed by a CMP method or an etchback method. Accordingly, the plugs 103 made of a conductive material(tungsten) are formed.

Next, as illustrated in FIG. 7B, a laminated metal film which includestitanium (Ti), titanium nitride (TiN), an aluminum alloy, and titanium(Ti) is formed on the first insulating layer 102 by, for example, asputtering method.

As illustrated in FIG. 7C, the laminated metal film is patterned into apredetermined shape by a photolithography method and a dry etchingmethod or a wet etching method to form a plurality of first electrodes110 which are connected to the plugs 103 in the display region.

The surface of the first insulating layer 102 between the firstelectrodes 110 is preferably etched in such a manner that the surface islocated at a position deeper than the bottoms of the first electrodes110 (deeper as closer to the substrate from the surface of the firstinsulating layer 102). Although the first electrodes 110 and the firstinsulating layer 102 may be separately etched, the first electrodes 110and the first insulating layer 102 are preferably collectively etched.Accordingly, it is possible to accurately align the side face positionof the first electrode 110 with the position of the inner wall of therecess 201 of the first insulating layer 102.

Accordingly, a desired recess 201 can be formed on the first insulatinglayer 102 also between the first electrodes 110 which are arrayed withhigh density. For example, the depth of the recess 201 on the firstinsulating layer 102 can be selected in any manner from the range of 1nm to 100 nm. The depth of the recess 200 on the upper face of thesecond insulating layer 120, which is formed in the next process, can beincreased by increasing the depth of the recess 201. Thus, it ispossible to easily increase the aspect ratio of the recess 200.

Next, as illustrated in FIG. 8A, an insulating layer such as an oxidesilicon film (SiOx), an oxynitride silicon film (SiON), or a siliconnitride film (SiNx) is formed over the first electrodes 110 by a plasmaCVD method to form the second insulating layer 120. A film formingtemperature of the second insulating layer 120 which is directlydeposited on the first electrodes 110 each of which includes an aluminumalloy film as the reflective metal layer 112 is preferably 400° C. orless in order to prevent variations in the surface roughness of thealuminum alloy. In this manner, between the first electrodes 110, therecess 200 which extends along the surface as the base is formed on theupper face of the second insulating layer 120 which covers the sidefaces of the first electrodes 110 and an exposed surface of the firstinsulating layer 102 which includes the recess 201.

The distance from the side face of each of the first electrodes 110which sandwich the recess 200 on the upper face of the second insulatinglayer 120 to the inner wall of the recess 200 corresponds to the filmthickness of the second insulating layer 120 on the side face of thefirst electrode 110. Thus, the distance can be made substantiallyuniform between each of the two first electrodes 110 and thecorresponding inner wall of the recess 200. That is, the recess 200 canbe formed between the first electrodes 110 by self-alignment (with highposition accuracy). Thus, it is possible to substantially uniformlyreduce leakage current between pixels within the display region surface.

The film thickness of the second insulating layer 120 may be, forexample, 1 nm to 500 nm. For example, the film thickness of the secondinsulating layer 120 can be selected so that the recess 200 which isformed along the surface thereof has a desired width or a desired depth.With such a structure and method, the recess 201 can be formed on thesurface (upper face) on which the organic layer 131 is deposited bydepositing an insulating material to be the second insulating layer 120along the recess 200 which is formed between the adjacent firstelectrodes 110.

That is, it is possible to form the recess 200 of the present embodimentwhich has a smaller width than the recess between the first electrodes110 which is formed by etching the first insulating layer 102 and thefirst electrodes 110. This is advantageous in locally thinning theorganic layer 131 inside the recess 200 in a film forming process forthe organic layer 131 described below. Further, this is advantageousalso in reducing asperities on the upper face of the organic layer 130to prevent a local increase in the resistance and improve the flatnesson the upper surface in the second electrode 140 which is formed overthe organic layer 130.

A maximum step on the surface of the second insulating layer 120 on thesubstrate is preferably the recess between the first electrodes 110described above. That is, when the bottom of the recess 200 is shallowerthan the bottom of the first electrode 110, the distance between thebottom face of the recess 200 of the second insulating layer 120 and theupper face of the second insulating layer 120 is preferably the maximumstep. The “bottom of the recess 200 is shallower than the bottom of thefirst electrode 110” means that the bottom face of the recess 200 islocated closer to the second electrode 140 from the substrate than thebottom face of the first electrode 110 is. In this case, the recess 200of the second insulating layer 120 is preferably formed on a face thatis located at the same height as the uppermost face of the secondinsulating layer 120.

Accordingly, the second electrode 140 and the moisture-proof layer 150which are formed in the next or subsequent processes may be formed so asto have a coverage property with respect to a minimum step required toreduce leakage between pixels. Thus, it is possible to easily secure acoverage margin of the second electrode 140 and the moisture-proof layer150. For example, since a defect of the second electrode 140 and themoisture-proof layer 150 can be reduced, it is possible to preventdeterioration of the display performance.

The film forming method for the second insulating layer 120 is notlimited to the above method. A known method that forms an insulatinglayer can be applied in any manner. For example, as a manufacturingmethod other than the above method, a high-density plasma CVD method, anALD method, a sputtering method, or a manufacturing method by applying acoating material by a spin coat method or a slit coat method may beselected. The second insulating layer 120 may be formed by laminating aplurality of layers. As the plurality of layers, the same materials maybe laminated, or different kinds of materials may be laminated in acombined manner.

Next, as illustrated in FIG. 8B, the insulating layer to be the secondinsulating layer 120 is patterned into a predetermined shape by aphotolithography method and a dry etching method to form correspondingopenings over the first electrodes 110. At the same time, an opening forconnecting the second electrode 140, which is formed in the laterprocess, to the metal layer which is the same layer as the firstelectrode 110 is also formed (not illustrated).

Next, cleaning is performed to remove a foreign substance on thesubstrate (on the first electrodes 110 and the second insulating layer120) before formation of the organic layer in the next process. Aftersuch a cleaning process, dehydration is performed to remove moisture onthe surface of the substrate.

Then, as illustrated in FIG. 9A, organic layers having a relatively lowresistance such as a hole injection layer and a hole transport layer aresequentially deposited as organic materials which constitute the organiclight emitting elements by, for example, a vacuum evaporation method toform the organic layer 131. For example, a rotary evaporation method, alinear evaporation method, or a transfer evaporation method can be usedas the vacuum evaporation method.

FIG. 11 is a schematic diagram describing evaporation. For example, amaximum value of an incidence angle ϕ of the organic material which isincident on the recess 200 of the second insulating layer 120 from aevaporation source 900 is made larger than an inclination angle θ of theinner wall of the recess 200 in a part where the inclination angle θ ismaximum in an evaporation period of an organic layer having a lowresistance. The organic layer having a low resistance includes, forexample, a hole injection layer and a hole transport layer. Asillustrated in FIG. 11, in the vacuum evaporation, a track 990 of anevaporated organic matter from the evaporation source 900 toward therecess 200 is substantially straight. Thus, shadowing occurs inside therecess 200 to form a film thickness distribution.

The organic layer 131 which is formed in this manner and includes theorganic layer having a low resistance such as a hole injection layer ora hole transport layer has a part whose film thickness is reduced alongthe depth direction of the recess inside the recess 200 which is formedon the surface of the second insulating layer 120. That is, a parthaving a high resistance is locally formed on the organic layer 131having a low resistance inside the recess 200. Leakage current throughthe low-resistance organic layer 131 can be reduced by forming such ahigh-resistance part.

Then, as illustrated in FIG. 9B, organic layers such as a light emittinglayer and an electron transport layer are sequentially deposited asorganic materials which constitute organic light emitting elements by,for example, a vacuum evaporation method to form the organic layer 132.Then, the second electrode 140 is formed by a vacuum evaporation methodwithout opening to the atmosphere from a reduced-pressure atmosphere.The organic layer 132 may include only a light emitting layer or mayhave a structure in which at least either an electron transport layer oran electron injection layer is laminated on a light emitting layer.

Although the present embodiment describes an example in which the secondelectrode 140 is formed over the organic layer 131 and the organic layer132, the light emitting device of the present embodiment is not limitedthereto. For example, an organic layer which includes at least either ahole injection layer or a hole transport layer and an organic layerwhich includes a light emitting layer which emits light having a colordifferent from a color of light emitted by the light emitting layer ofthe organic layer 132 may be laminated on the organic layer 132.Further, an organic layer which includes at least either a holeinjection layer or a hole transport layer and an organic layer whichincludes a light emitting layer which emits light having a colordifferent from colors of light emitted by the above light emittinglayers may be further laminated thereon. The organic layer includingeach of the light emitting layers may further include an electrontransport layer or an electron injection layer.

For example, a rotary evaporation method, a linear evaporation method,or a transfer evaporation method can be used as the vacuum evaporationmethod described above. For example, the organic layer 132 whichincludes the light emitting layer and the electron transport layer iscommon between pixels. Thus, it is not necessary to locally reduce thefilm thickness of the organic layer 132 inside the recess 200. Thus, theorganic layer 132 may have a film thickness distribution that differsfrom the film thickness distribution of the organic layer having a lowresistance such as a hole injection layer or a hole transport layer andpreferably has a film thickness distribution that reduces the influenceof the recess 200.

In the above vacuum evaporation method, each material layer can beselectively deposited in a predetermined region by using a metal mask.

Next, as illustrated in FIG. 10A, the moisture-proof layer 150 is formedso as to cover the second electrode 140 by, for example, a plasma CVDmethod, a sputtering method, an ALD method, or a combination thereof. Afilm forming temperature of the moisture-proof layer 150 is preferablyequal to or less than a decomposition temperature of the organicmaterials of the organic layer 131 and the organic layer 132, forexample, 120° C. or less.

Next, as illustrated in FIG. 10B, for example, a material of a redfilter is applied onto the moisture-proof layer 150 and patterned byphotolithography to form a red filter part. Then, in a manner similar tothe red filter, a green filter and a blue filter are sequentially formedto form the color filter layer 170.

A processing temperature in the process of forming the color filterlayer 170 is preferably equal to or less than the decompositiontemperature of the organic materials of the organic layer 131 and theorganic layer 132, for example, 120° C. or less. The planarized layer160 which is transparent and has flatness for improving adhesion betweenthe color filter layer 170 and the moisture-proof layer 150 may beformed between the color filter layer 170 and the moisture-proof layer150.

Next, a terminal extraction pad in the display device is patterned intoa predetermined shape by a photolithography method and a dry etchingmethod.

The display device according to the present embodiment described aboveincludes the second insulating layer 120 which is continuous between theopposed ends of the adjacent first electrodes 110 from an upper part ofone of the ends to an upper part of the other end. That is, the upperface of the first insulating layer 102 is covered with the secondinsulating layer 120 and not in contact with the organic layer 131between the first electrodes 110. Thus, it is possible to reduce orprevent leakage current flowing to the organic layer 131 through theinterface between the first insulating layer 102 and the secondinsulating layer 120.

Further, the aspect ratio of the recess 200 on the upper face of thesecond insulating layer 120 between the organic light emitting elementsis 0.5 or more. Accordingly, the film thickness of the low-resistanceorganic layer 131 can be reduced inside the recess 200. Thus, it ispossible to reduce leakage current through the organic layer 131 on thesecond insulating layer 120 between adjacent pixels.

When the aspect ratio of the recess 200 is 1 or more, it is possible toprevent high resistance or discontinuity of the second electrode 140caused by a locally small film thickness of the second electrode 140above the recess 200.

Second Example Embodiment

In the present embodiment, only a part that differs from the firstembodiment will be described with reference to FIGS. 12 and 13.Description for a configuration, a function, a material, and an effectthat are similar to those of the first embodiment will be omitted.

FIG. 12 is a schematic sectional view of a part corresponding to lineA-A′ which extends across two adjacent sub-pixels in FIG. 2 described inthe first embodiment. As described above, there are a pixel region and aperipheral circuit region on a substrate 100. A drive circuit layer 101which includes a pixel circuit is disposed corresponding to each of theregions. The drive circuit layer 101 includes various transistors, acapacitor unit, and a wiring layer. The drive circuit layer may beappropriately provided with a light shielding layer for reducing straylight to the transistors.

A first insulating layer 102 is disposed over the drive circuit layer101. Organic light emitting elements as light emitting elements EL arearrayed on the first insulating layer 102. These organic light emittingelements on the first insulating layer 102 may have a structure inwhich, for example, a first electrode 110 as an anode, a secondinsulating layer 120, an organic layer 131, an organic layer 132 whichincludes a light emitting layer, and a second electrode 140 as a cathodeare laminated in this order.

Between adjacent first electrodes 110, the upper face of the secondinsulating layer 120 includes a recess 200, and a cavity 125 is presentinside the recess 200. An organic layer 130 is disposed on the recess ofthe second insulating layer 120 with the cavity 125 interposedtherebetween. The organic light emitting elements are protected by amoisture-proof layer 150 which is disposed over the second electrode140. A planarized layer 160 and a color filter layer 170 may be disposedover the moisture-proof layer 150.

Hereinbelow, the structure of each part will be described in detail.FIG. 13 is an enlarged schematic sectional view of a region P surroundedby a broken line in FIG. 12. The region P is a region from one ofopposed ends of the adjacent first electrodes 110 to the other end.

The second insulating layer 120 covers the upper face and the side faceof the end of each of the first electrodes 110. Further, the secondinsulating layer 120 is disposed continuously between the opposed endsof the adjacent first electrodes 110 from an upper part of one of theends to an upper part of the other end. The second insulating layer 120covers an interface between the first electrode 110 and the firstinsulating layer 102. Thus, it is possible to reduce or prevent leakagecurrent from flowing to the organic layer 131 through an interfacebetween the first insulating layer 102 and the second insulating layer120.

The present embodiment describes an example in which, between theadjacent first electrodes 110, the bottom of the recess 200 on the upperface of the second insulating layer 120 has a part shallower than thebottoms of the first electrodes 110. Further, there is described anexample in which, between the adjacent first electrodes 110, the heightof the surface of the first insulating layer 102 which serves as a baseof the second insulating layer 120 is lower than the bottoms of thefirst electrodes 110 (has a groove). For example, the depth of thegroove of the first insulating layer 102 (D2 in the drawing) can beselected in any manner from the range of 1 nm to 100 nm.

As illustrated in FIG. 13, the cavity 125 is present in a space insidethe recess 200 on the upper face of the second insulating layer 120between the first electrodes 110. The film thickness of the organiclayer 131 which is laminated over the second insulating layer 120 andhas a low resistance becomes thinner along the depth direction of therecess 200 of the second insulating layer 120 on the inner wall surfaceof the recess 200. Preferably, the low-resistance organic layer 131 hasa discontinuous part inside the recess 200.

On the other hand, part of the low-resistance organic layer 131 having athicker film thickness than the inner wall surface of the recess 200 andthe organic layer 132 disposed over the low-resistance organic layer 131are laminated near the upper end of the recess 200 of the secondinsulating layer 120. When the distance between the adjacent firstelectrodes 110 is short, a width S1 of the recess 200 on the upper faceof the second insulating layer 120 becomes small. Thus, the organiclayer 130 disposed over the second insulating layer 120 does not extendalong the recess 200, but is formed above the recess 200 with a cavityleft inside the recess 200.

As a result, the organic layer 130 extends across the recess 200 of thesecond insulating layer 120 above the recess 200, and an opening of therecess 200 is closed by the organic layer 130 to form the cavity 125.

In this manner, it is possible to reduce the film thickness of thelow-resistance organic layer 131 between the first electrodes 110 whichare disposed adjacent to each other using the inside of the recess 200on the upper face of the second insulating layer 120 to locally increasethe resistance of the organic layer 131. The structure in which thecavity 125 is present inside the recess 200 is not limited to the casewhere the distance between the first electrodes 110 is short. As othercases, the depth of the recess 200 is deep due to the existence of agroove of the first insulating layer 102 which is formed at a positionbetween the first electrodes 110, or the height of the adjacent firstelectrodes 110 is high.

Further, it is possible to prevent reduction in a separated distancebetween the first electrode 110 and the second electrode 140 caused bythe recess 200 of the second insulating layer 120 by the existence ofthe cavity 125 between the first electrode 110 and the second electrode140. Thus, it is possible to reduce or prevent an electric fieldintensity between the first electrode 110 and the second electrode 140from locally increasing in the recess 200. Accordingly, it is possibleto more effectively reduce leakage current in the inter-pixel direction.

The display device according to the present embodiment described abovealso includes the second insulating layer 120 which is continuousbetween the opposed ends of the adjacent first electrodes 110 from anupper part of one of the ends to an upper part of the other end. Thatis, the upper face of the first insulating layer 102 is covered with thesecond insulating layer and not in contact with the organic layer 131between the first electrodes 110. Thus, it is possible to reduce orprevent leakage current flowing to the organic layer 131 through theinterface between the first insulating layer 102 and the secondinsulating layer 120.

Third Example Embodiment

In the present embodiment, only a part that differs from the first andsecond embodiments will be described with reference to FIGS. 14 to 19B.Description for a configuration, a function, a material, and an effectthat are similar to those of the first embodiment will be omitted.

FIG. 14 is a schematic sectional view of a part corresponding to lineA-A′ which extends across two adjacent sub-pixels in FIG. 2 described inthe first embodiment. As illustrated in FIG. 14, each sub-pixel isprovided with a first electrode 110. A voltage or a current applied toeach first electrode 110 can be independently controlled. A conductivemember 115 is disposed between adjacent first electrodes 110.

A voltage or a current applied to the conductive member 115 can becontrolled independently of the first electrodes 110 which are adjacentto the conductive member 115. The conductive member 115 may have acommon potential within a display region, or a plurality of conductivemembers 115 may be provided within the display region and controlledindependently of each other.

The voltage applied to the conductive member 115 may be a constantvoltage or may be modulated. Leakage current between adjacent pixels canbe reduced by controlling the potential of the conductive member 115.Thus, for example, the voltage applied to the conductive member 115 hasthe same polarity as the first electrode 110 to reduce an electric fieldbetween the first electrode 110 and the conductive member 115.Accordingly, it is possible to reduce leakage current in the inter-pixeldirection. The voltage that can be applied to the conductive member 115is not limited to the above voltage, and may be set to any voltage.

The conductive member 115 may have a constant width within the displayregion or may have a plurality of widths. For example, the width of theconductive member 115 disposed between a sub-pixel R and a sub-pixel Gmay differ from the width of the conductive member 115 disposed betweenthe sub-pixel R and a sub-pixel B. A plurality of conductive members 115may be disposed between the first electrodes 110.

The conductive member 115 disposed between the first electrodes 110 maynot be disposed on the center between the first electrodes 110. Forexample, when the influence of display deterioration caused by leakagecurrent between pixels varies between sub-pixels, the layout of theconductive member 115 can be adjusted according to the degree of theinfluence.

As illustrated in FIG. 14, the conductive member 115 is disposed on thefirst insulating layer 102 between the adjacent first electrodes 110.The second insulating layer 120 covers the peripheries of the firstelectrodes 110 and the upper part of the conductive member 115.

The width of the conductive member 115 is preferably sufficientlynarrower than the width of the first electrode 110 so as to increase anarea occupancy of the first electrode within the display region.

The second insulating layer 120 covers an interface between the firstelectrode 110 and the first insulating layer 102 and an interfacebetween the conductive member 115 and the first insulating layer 102.Specifically, the second insulating layer 120 is continuous between endsof the adjacent first electrodes 110, the ends being adjacent to eachother with the conductive member 115 interposed therebetween, from anupper part of one of the ends to an upper part of the other end throughthe conductive member 115. The second insulating layer 120 covers theupper face and the side face of the end of each of the first electrodes110 and the upper face and the side face of the conductive member 115.

The height of the second insulating layer 120 over the first electrode110 may be substantially equal to the height of the second insulatinglayer 120 on the conductive member 115. Accordingly, it is possible toincrease the aspect ratio of a recess 200 (described below) on the upperface of the second insulating layer 120 which covers the upper face andthe side face of the end of each of the first electrodes 110 and theupper face and the side face of the conductive member 115. Thus, it ispossible to easily reduce the film thickness of an organic layer 131inside the recess 200 over the second insulating layer 120.

Note that these organic light emitting elements are protected by amoisture-proof layer 150 which is disposed over a second electrode 140.A color filter layer 170 is disposed over the moisture-proof layer 150.

Hereinbelow, the structure of each part will be described in detail.

The first electrodes 110 and the conductive member 115 are disposed onthe first insulating layer 102. In FIG. 14, the conductive member 115and the first electrodes 110 can be formed of the same material at thesame time. The conductive member 115 may have a smaller reflectivitythan a light emission region of the first electrode 110. Accordingly, itis possible to prevent deterioration of a display quality caused byunintentional light emitted from the display device due to stray lightinside the display device reflected by the surface of the conductivemember 115. For example, the film thickness of an injection efficiencyadjusting layer 113 on the conductive member 115 may be thicker than thefilm thickness of the injection efficiency adjusting layer 113 in thelight emission region of the first electrode 110. Further, a materialcapable of reducing reflection which is not included in the firstelectrode 110 may be disposed on the upper face of the conductive member115 (not illustrated).

The conductive member 115 may be discontinuously disposed in the pixelregion. When it is necessary to prevent a voltage drop in the pixelregion, a plug which is connected to the conductive member 115 may bedisposed within the pixel region. On the other hand, the firstelectrodes 110 can be arrayed with high density by disposing the plugconnected to the conductive member 115 on the outer periphery of thepixel region in which the first electrodes 110 are arrayed.

The second insulating layer 120 covers the upper face and the side faceof the end of each of the first electrodes 110. The second insulatinglayer 120 extends across the first electrode 110 and the firstinsulating layer 102, that is, covers the interface between the firstelectrode 110 and the first insulating layer 102. The second insulatinglayer 120 extends across the conductive member 115 and the firstinsulating layer 102, that is, covers the interface between theconductive member 115 and the first insulating layer 102. As a result,the upper face of the second insulating layer 120 includes the recess200 between the first electrode 110 and the conductive member 115.

The inner wall surface of the recess 200 may be a continuous slope ormay have a step. The inner wall surface of the recess 200 may have aforward tapered angle with respect to the substrate surface, or may havea backward tapered angle partially or entirely. An inclination angle ofthe inner wall surface of the recess 200 may vary between pixels havingdifferent emission colors.

In FIG. 14, the bottom of the recess 200 which is formed along thesurface of the second insulating layer 120 has a part shallower than thebottom of the first electrode 110 between the first electrode 110 andthe conductive member 115. Further, FIG. 14 illustrates an example inwhich, between the first electrode 110 and the conductive member 115,the height of the surface of first insulating layer 102 which serves asa base of the second insulating layer 120 is lower than the bottoms ofthe first electrode 110 and the conductive member 115 (forms a groove).

The depth of the upper face of the first insulating layer 102 betweenthe first electrode 110 and the conductive member 115 may be deeper atleast in a range where the second insulating layer 120 can cover theinterface between the first electrode 110 and the first insulating layer102. For example, the depth of the groove can be selected in any mannerfrom the range of 1 nm to 100 nm. Accordingly, it is possible toincrease the aspect ratio of the recess 200 on the upper face of thesecond insulating layer 120 which is formed on the groove.

FIGS. 15A and 15B are enlarged schematic sectional views of a partbetween pixels according to FIG. 14. As illustrated in FIG. 15A, a spacebetween the first electrode 110 and the conductive member 115 which areadjacent to each other has a width S4. A space between the inner wallsof the recess 200 of the second insulating layer 120 has a width S5. Arelationship (aspect ratio) between the depth D1 of the recess 200 onthe upper face of the second insulating layer 120 and the width S5 ofthe space of the recess 200 preferably satisfies the relationship ofFormula 1 described in the first embodiment.

For example, in the high-definition display device as described in thepresent embodiment, when the width S4 is 10 nm to 500 nm, the width S5of the space of the recess 200 can be set in the range of 5 nm to 500nm. It is possible to locally increase the resistance of the organiclayer 131 having a low resistance between the first electrodes 110 whichare disposed adjacent to each other using the inside of the recess 200by setting the lower limit of the width S5 of the space between theinner walls of the recess 200 in this manner.

As illustrated in FIG. 15B, a cavity 125 may be formed in the organiclayer 130 without filling the inside of the recess 200 on the upper faceof the second insulating layer 120 between the first electrode 110 andthe conductive member 115 with the organic layer 130. When the organiclayer 130 has such a structure in which part of the organic layer 130extends across the recess 200 of the second insulating layer 120, thefilm thickness of the low-resistance organic layer 131 can beappropriately reduced inside the recess 200 by the side face of therecess 200 having a backward tapered angle. The conductive member 115may have a nonuniform line width in plan view.

FIGS. 16A and 16B illustrate examples of a planar structure diagram ofthe conductive member 115 which is disposed between the first electrodes110. The width and the length of the conductive member 115 can be set inany manner. For example, the conductive member 115 may be continuouslyarranged with a uniform width as illustrated in FIG. 15A or may bediscontinuously arranged as illustrated in FIG. 15B.

The display device as described above can be manufactured, for example,in the following manner.

FIGS. 17A to 17C, 18A and 18B, and 19A and 19B illustrate an example ofa manufacturing process for the display device according to the presentembodiment.

As illustrated in FIG. 17A, a laminated metal film is formed on thefirst insulating layer 102 in a manner similar to the first embodimentand patterned into a predetermined shape by a photolithography methodand a dry etching method or a wet etching method. Accordingly, aplurality of first electrodes 110 which are connected to the respectiveplugs 103 and the conductive member 115 are formed in the display regionat the same time. It is possible to increase the accuracy of therelative distance between the recess of the second insulating layer 120formed in the next process and the first electrodes 110 by forming thefirst electrodes 110 and the conductive member 115 at the same time.

The surface of the first insulating layer 102 between the firstelectrode 110 and the conductive member 115 is etched so that thesurface is located at a position deeper than the bottoms of the firstelectrode 110 and the conductive member 115 (deeper as closer to thesubstrate from the surface of the first insulating layer 102). The firstelectrodes 110 and the first insulating layer 102 may be separatelyetched or collectively etched. It is possible to accurately align theside face position of the first electrode 110 with the position of therecess (groove) of the first insulating layer 102 by collectivelyetching the first electrodes 110 and the first insulating layer 102.Accordingly, a desire recess (groove) can be formed on the firstinsulating layer 102 also between the first electrodes 110 which arearrayed with high density.

For example, the depth of the recess 201 of the first insulating layer102 can be selected in any manner from the range of 1 nm to 100 nm.However, the depth of the recess 201 of the first insulating layer 102described herein is not limited to the above range, and may be anydepth. The depth of the recess 200 on the upper face of the secondinsulating layer 120, which is formed in the next process, can beincreased by increasing the depth of the recess 201. Thus, it ispossible to increase the aspect ratio of the recess 200.

Further, an etching stop layer may be additionally formed at the depthof the bottom of the recess 201 of the first insulating layer 102 tomake the depth of the recess 201 of the first insulating layer 102uniform between recesses 201 within the display region (notillustrated).

The etching stop layer preferably has a high etching selectivity ratiowith the first insulating layer 102. For example, when the firstinsulating layer 102 is a silicon oxide film, a silicon nitride film canbe preferably used as the etching stop layer. Alternatively, a lightshielding layer made of a metal material such as titanium (Ti) ortitanium nitride (TiN) can also be used as the etching stop layer.

Next, as illustrated in FIG. 17B, an insulating layer such as an oxidefilm, an oxynitride film, or a silicon nitride film is formed on thefirst insulating layer 102 on which the first electrodes 110 are arrayedby a plasma CVD method to form the second insulating layer 120. Forexample, when each of the first electrodes 110 includes a layerincluding an aluminum alloy as a reflective metal layer, a film formingtemperature of the second insulating layer 120 which is deposited on thefirst electrodes 110 is preferably 400° C. or less in order to preventvariations in the surface roughness of the aluminum alloy.

The second insulating layer 120 which covers, between the firstelectrodes 110, the upper face and the side face of the end of each ofthe first electrodes 110, the upper face and the side face of theconductive member 115, and the upper face of the first insulating layer102 including the recess 201 includes a plurality of recesses 200 on theupper face thereof. The film thickness of the second insulating layer120 on the side faces of the first electrode 110 and the conductivemember 115 can be made substantially uniform by forming the recesses 200in this manner. That is, the recesses 200 can be formed between thefirst electrodes 110 by self-alignment (with high position accuracy).Thus, it is possible to substantially uniformly and effectively reduceleakage current between pixels within the display region surface.

The thickness of the second insulating layer 120 may be any value in therange of 1 nm to 500 nm. For example, the thickness of the secondinsulating layer 120 can be selected so that the recess 200 which isformed along the surface of the second insulating layer 120 has adesired width or a desired depth.

With such a structure and method, the recess 200 can be formed on theupper face of a part of the second insulating layer 120 on which theorganic layer 131 is disposed by forming the second insulating layer 120along the recess formed between the adjacent first electrodes 110.Accordingly, it is possible to form the recess 200 which has a smallerdistance between inner walls than the recess between the first electrode110 and the conductive member 115 which is formed by etching the firstelectrode 110 and the conductive member 115 and etching the firstinsulating layer 102.

This is advantageous in locally reducing the film thickness of theorganic layer 131 inside the recess 200 in a film forming process forthe organic layer 131 described below.

A maximum step on the surface of the second insulating layer 120 on thesubstrate is preferably the recess 200 between the first electrodes 110described above. That is, the distance between the bottom of the recess200 and the upper face of the periphery of the recess 200 of the secondinsulating layer 120 is preferably larger than the difference betweenanother recess and another projection on the upper face of the secondinsulating layer 120. In this case, the upper end of the recess 200 ofthe second insulating layer 120 is preferably located at the same heightas the uppermost face of the second insulating layer 120.

Accordingly, the second electrode 140 and the moisture-proof layer 150which are formed in the next or subsequent processes may be formedtaking into consideration a coverage property with respect to a minimumstep required to reduce leakage between pixels. Thus, it is possible toeasily secure a coverage margin of each of the layers. Accordingly,since a defect of the second electrode 140 and the moisture-proof layer150 can be reduced, it is possible to prevent deterioration of thedisplay performance.

The film forming method for the second insulating layer 120 is notlimited to the above method. A known method that forms an insulatinglayer can be applied in any manner. For example, as a method other thanthe above method, a high-density plasma CVD method, an ALD method, asputtering method, or a method by applying a coating material by a spincoat method or a slit coat method may be selected. The second insulatinglayer 120 may be formed by laminating a plurality of layers.

Next, as illustrated in FIG. 17C, the second insulating layer 120 ispatterned into a predetermined shape by a photolithography method and adry etching method to form corresponding openings over the firstelectrodes 110. At the same time, an opening for connecting the secondelectrode 140, which is formed in the later process, to the metal layerwhich is the same layer as the first electrode 110 may also be formed.

Next, cleaning is performed to remove a foreign substance on the secondinsulating layer 120 and the first electrodes 110 before formation ofthe organic layer 131 in the next process. After the cleaning process,dehydration is performed to remove moisture on the surface of thesubstrate. Thereafter, in a manner similar to the first embodiment, thedisplay device according to the present embodiment can be formed asillustrated in FIGS. 18A and 18B and 19A and 19B.

As indicated by a region Q surrounded by a broken line in FIG. 19A, inthe present embodiment, it is possible to reduce the roughness of themoisture-proof layer 150 above the recess 200 of the second insulatinglayer 120. Thus, it is possible to reduce a defect in the moisture-prooflayer 150. Further, in the course of light emitted from the lightemitting region on the first electrode 110 passing through themoisture-proof layer 150, it is possible to reduce color mixture causedby complicated reflection of the light due to the roughness on thesurface of the moisture-proof layer 150.

According to the present embodiment, it is possible to form the recess200 having a smaller width than that in the first and second embodimentson the second insulating layer 120 with a high aspect ratio by disposingthe conductive member 115 between the adjacent first electrodes 110. Theconductive member 115 and the first electrodes 110 can be collectivelyformed in the same layer. Thus, it is possible to increase the accuracyof position alignment between the first electrodes 110 and the recesses200.

Further, the potential of the conductive member 115 can be controlledindependently of the first electrodes 110. Accordingly, it is possibleto further reduce leakage current by adjusting a potential gradientbetween the first electrodes 110.

According to the above embodiment, it is possible to effectively reduceleakage between pixels in the high-definition display device.

Fourth Example Embodiment

As illustrated in FIGS. 20A and 20B, as a modification of the thirdembodiment, an insulating member 116 may be provided instead of theconductive member 115. Thus, only a part that differs from the thirdembodiment will be described. Description for a configuration, afunction, a material, and an effect that are similar to those of thethird embodiment will be omitted.

The insulating member 116 is formed in a separate process from the firstelectrodes 110. Thus, the height of the insulating member 116 can be setindependently of the first electrodes 110. For example, it is possibleto effectively reduce leakage current between pixels by making a heighth2 of the insulating member 116 higher than a height h1 of the firstelectrodes 110.

Fifth Example Embodiment

In the present embodiment, an example in which the display devicedescribed in each of the first to fourth embodiments is applied to anelectronic apparatus will be described with reference to FIG. 22.

An embodiment in which the above display device is applied to a digitalcamera which is an imaging apparatus as an example of an electronicapparatus will be described with reference to FIG. 22. A lens unit 901is an imaging optical system which forms an optical image of a subjecton an image sensor 905. The lens unit 901 includes a focusing lens, avariable power lens, and a diaphragm. Driving of a focusing lensposition, a variable power lens position, and an opening diameter of thediaphragm is controlled by a control unit 909 through a lens drivedevice 902.

A mechanical shutter 903 is disposed between the lens unit 901 and theimage sensor 905. Driving of the mechanical shutter 903 is controlled bythe control unit 909 through a shutter drive device 904. The imagesensor 905 is disposed in such a manner that light from the lens entersthe image sensor 905. The image sensor 905 converts an optical imageformed by the lens unit 901 with a plurality of pixels to an imagesignal.

An image signal output from the image sensor 905 is input to a signalprocessing unit 906. The signal processing unit 906 performs A/Dconversion, demosaicing, white balance adjustment, and coding on theimage signal. The signal processing unit 906 also performs focusdetection which detects a de-focusing amount and a direction by a phasedifference detecting method on the basis of a signal obtained from theimage signal output from the image sensor 905.

A timing generation unit 907 outputs various timing signals to the imagesensor 905 and the signal processing unit 906. The control unit 909includes, for example, memories (ROM, RAM) and a microprocessor (CPU).The control unit 909 loads a program stored in the ROM to the RAM andcontrols each unit by executing the loaded program by the CPU toimplement various functions of the digital camera. The functionsimplemented by the control unit 909 include automatic focus detection(AF) and automatic exposure control (AE). A signal based on a signaloutput from the image sensor 905 is input to the control unit 909.Further, a signal for an electronic viewfinder is input to a displayunit 912.

A memory unit 908 is used by the control unit 909 and the signalprocessing unit 906 for temporarily storing image data or used as a workarea. A medium I/F unit 910 is an interface for reading and writing arecording medium 911 which is, for example, a detachable memory card.The display unit 912 is used for displaying a captured image and variouspieces of information of the digital camera. An operation unit 913 is auser interface which is used by a user for performing instruction andsetting to the digital camera, such as a power switch, a release button,and a menu button.

It is possible to reduce color mixture and improve the efficiency byusing the display device described in any of the first to fourthembodiments as the display unit 912. Thus, it is possible to provide animaging apparatus with a higher definition or a reduced powerconsumption.

An operation of the digital camera during shooting will be described.When power is turned on, the digital camera is brought into a shootingstandby state. The control unit 909 starts a video shooting process anda display process for causing the display unit 912 to act as theelectronic viewfinder. When a shooting preparation command (e.g., a halfpress of the release button of the operation unit 913) is input in theshooting standby state, the control unit 909 starts focus detection. Forexample, the control unit 909 can perform the focus detection by a phasedifference detection method. Specifically, an image misalignment amountis obtained on the basis of a phase difference in a signal waveformformed by combining an A image signal and a B image signal of the sametype obtained from a plurality of pixels to obtain a de-focusing amountand a direction.

Then, the control unit 909 obtains a moving amount and a movingdirection of the focusing lens of the lens unit 901 from the obtainedde-focusing amount and direction, and drives the focusing lens throughthe lens drive device 902 to adjust a focus of the imaging opticalsystem. After the driving of the focusing lens, focus detection based ona contrast evaluation value may be further performed as needed to finelyadjust the focusing lens position.

Then, when a shooting start command (e.g., a full press of the releasebutton) is input, the control unit 909 executes a shooting operation forrecording, processes obtained image data by the signal processing unit906, and stores the processed image data in the memory unit 908. Then,the control unit 909 records the image data stored in the memory unit908 in the recording medium 911 through the medium I/F unit 910. Theimage data may be output to an external apparatus such as a computerthrough an external I/F unit (not illustrated).

The electronic apparatus is not limited to the imaging apparatus. Thedisplay device according to any of the first to fourth embodiments maybe used as a display unit of various electronic apparatuses such as amobile phone, a game machine, a smart watch, a television, a commerciallarge display, and a personal computer display.

One aspect of the disclosure is capable of, in a display device thatincludes a plurality of light emitting elements arrayed on an insulatinglayer and an insulating layer disposed between adjacent light emittingelements, reducing leakage current through the interface between theinsulating layers.

While the disclosure has been described with reference to exampleembodiments, it is to be understood that the disclosure is not limitedto the disclosed example embodiments. The scope of the following claimsis to be accorded the broadest interpretation so as to encompass allsuch modifications and equivalent structures and functions.

What is claimed is:
 1. A light emitting device comprising: a drivecircuit layer including a first transistor, a second transistor and anisolation region disposed between the first transistor and the secondtransistor; a first insulating layer including a main surface anddisposed on the drive circuit layer; a first lower electrode and asecond lower electrode both disposed on the main surface of the firstinsulating layer; a second insulating layer disposed between the firstlower electrode and the second lower electrode, on an end of the firstlower electrode, and on an end of the second lower electrode; an organiclayer disposed on the first lower electrode, the second insulatinglayer, and the second lower electrode; and an upper electrode disposedon the organic layer, wherein the second insulating layer includes afirst part located on the end of the first lower electrode, a secondpart located on the end of the second lower electrode, and a third partcontinuous from the first part to the second part, in a planar view froma first direction which is perpendicular to the main surface, the thirdpart of the second insulating layer and the isolation region areoverlapped.
 2. The light emitting device according to claim 1, whereinan upper face of the third part of the second insulating layer includesa first recess between the first lower electrode and the second lowerelectrode, and in a planar view from the first direction, the recess andthe isolation region are overlapped.
 3. The light emitting deviceaccording to claim 1, wherein the first insulating layer includes asecond recess in a region between the first lower electrode and thesecond lower electrode on the first insulating layer.
 4. The lightemitting device according to claim 3, wherein in a planar view from thefirst direction, the second recess and the isolation region areoverlapped.
 5. The light emitting device according to claim 1, wherein alength of the first recess in the first direction is 0.5 times or more alength of the first recess in a second direction perpendicular to thefirst direction.
 6. The light emitting device according to claim 1,wherein a length of the first recess in the first direction is longerthan a length of the first recess in a second direction perpendicular tothe first direction.
 7. The light emitting device according to claim 1,wherein the first insulating layer includes a plurality of the recesses.8. A light emitting device comprising: a drive circuit layer including afirst transistor, a second transistor and an isolation region disposedbetween the first transistor and the second transistor; a firstinsulating layer including a main surface and disposed on the drivecircuit layer; a first lower electrode and a second lower electrode bothdisposed on the main surface of the first insulating layer; a secondinsulating layer disposed between the first lower electrode and thesecond lower electrode, on an end of the first lower electrode, and onan end of the second lower electrode; an organic layer disposed on thefirst lower electrode, the second insulating layer, and the second lowerelectrode; an upper electrode disposed on the organic layer; and acavity disposed over the second insulating layer and disposed under theupper electrode and, in a planar view from a first direction which isperpendicular to the main surface, disposed between the first lowerelectrode and the second lower electrode, wherein in a planar view fromthe first direction, the cavity and the isolation region are overlapped.9. The light emitting device according to claim 8, wherein the firstinsulating layer includes a recess in a region between the first lowerelectrode and the second lower electrode on the first insulating layer.10. The light emitting device according to claim 8, wherein the firstinsulating layer includes a plurality of the recesses.
 11. The lightemitting device according to claim 1, further comprising a conductivemember disposed between the first insulating layer and the secondinsulating layer, wherein in a planar view from the first direction, theconductive member is disposed between the first lower electrode and thesecond lower electrode.
 12. The light emitting device according to claim11, wherein the conductive member includes the same material as thefirst lower electrode and the second lower electrode.
 13. The lightemitting device according to claim 1, wherein a film thickness of theorganic layer inside the recess is smaller than a film thickness of theorganic layer on the second insulating layer.
 14. The light emittingdevice according to claim 1, further comprising a substrate, wherein thefirst insulating layer disposed on the substrate, and the substrate isopaque.
 15. An electronic apparatus comprising: the light emittingdevice according to claim 1; and a control unit configured to input asignal to the light emitting device.
 16. An electronic apparatuscomprising: the light emitting device according to claim 8; and acontrol unit configured to input a signal to the light emitting device.